NDLI: Magnetic domain reversal behavior for various patterned hole depths

Content Provider	IEEE Xplore Digital Library
Author	Te-Ho Wu Ye, L.X. Chun-Shin Yeh Huang, Y.W. Bohr-Ran Huang Wu, J.C.
Copyright Year	1965
Abstract	We have measured the domain reversal behavior for amorphous alloys of a rare earth-transition metal DyFeCo thin film with hole arrays by means of a modified Kerr microscope. We found that the shallow hole arrays had sharper domain boundaries than the deeper hole arrays when an applied magnetic field nears the coercivity. We also found that, when the hole depth is shallower, the magnetic anisotropy becomes more profound for the domain pinning effect. Moreover, the magnetic domain pinning effect due to the hole barrier becomes significantly practical as the hole depth approaches the film thickness.
Sponsorship	IEEE Magnetics Society
Starting Page	950
Ending Page	952
Page Count	3
File Size	894460
File Format	PDF
ISSN	00189464
Volume Number	41
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic domains Magnetic force microscopy Electron beams Magnetic films Etching Magnetic field measurement Magnetic anisotropy Perpendicular magnetic anisotropy Perpendicular magnetic recording Resists pinning effect Coercivity hole arrays magnetic domain patterned material
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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