NDLI: Doped contacts for high-longevity optically activated, high-gain GaAs photoconductive semiconductor switches

Content Provider	IEEE Xplore Digital Library
Author	Mar, A. Loubriel, G.M. Zutavern, F.J. O'Malley, M.W. Helgeson, W.D. Brown, D.J. Hjalmarson, H.P. Baca, A.G. Thornton, R.L. Donaldson, R.D.
Copyright Year	1973
Abstract	The longevity of high-gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs depends on the thickness of the doped layers and is at least 100 A for a dopant diffusion depth of 4 /spl mu/m. This current could be increased by employing multiple switches connected in parallel. The contact metal has a different damage mechanism, and the threshold for damage (/spl sim/40-80 A) is not further improved beyond a dopant diffusion depth of about 2 /spl mu/m. In a diffusion-doped contact switch, the switching performance is not degraded at the onset of contact metal erosion, unlike a switch with conventional contacts. For fireset applications operating at 1-kV/1-kA levels and higher, doped contacts have not yet resulted in improved longevity. We employ multifilament operation and InPb solder/Au ribbon wirebonding to demonstrate >100-shot lifetime at 1-kV/1-kA.
Sponsorship	IEEE Nuclear and Plasma Sciences Society
Starting Page	1507
Ending Page	1511
Page Count	5
File Size	116499
File Format	PDF
ISSN	00933813
Volume Number	28
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Photoconducting devices Optical switches Proximity effect Contact resistance Silicon compounds Furnaces Zinc Ohmic contacts Degradation
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Condensed Matter Physics

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