NDLI: Longevity of optically activated, high gain GaAs photoconductive semiconductor switches

Content Provider	IEEE Xplore Digital Library
Author	Loubriel, G.M. Zutavern, F.J. Mar, A. Hjalmarson, H.P. Baca, A.G. O'Malley, M.W. Helgeson, W.D. Falk, R.A. Brown, D.J.
Copyright Year	1973
Abstract	The longevity of high gain GaAs photoconductive semiconductor switches (PCSSs) has been extended to well over ten million pulses by reducing the density of carriers at the semiconductor to metal interface. This was achieved by reducing the density in the vertical and lateral directions. The latter was achieved by varying the spatial distribution of the trigger light thereby widening the current filaments that are characteristic of the high gain switches. We reduced the carrier density in the vertical direction by using ion implantation. These results were obtained for currents of about 10 A, current duration of 3.5 ns, and switched voltage of /spl sim/2 kV. At currents of /spl sim/70 A, the switches last for 0.6 million pulses. In order to improve the performance at high currents, new processes such as deep diffusion and epitaxial growth of contacts are being pursued. To guide this effort we recorded open shutter, infra-red images, and time-resolved Schlieren images of the current filaments, which form during high gain switching. We measured, under varying conditions, a carrier (electrons or holes) density that ranges from 3/spl times/10/sup 17/ cm/sup -3/ to 6/spl times/10/sup 18/ cm/sup -3/.
Sponsorship	IEEE Nuclear and Plasma Sciences Society
Starting Page	1393
Ending Page	1402
Page Count	10
File Size	1237128
File Format	PDF
ISSN	00933813
Volume Number	26
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Photoconductivity Photoconducting materials Photoconducting devices Optical switches Optical pulses Charge carrier density Ion implantation Voltage Epitaxial growth
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Condensed Matter Physics

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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