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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Schoenberg, J.S.H. Burger, J.W. Tyo, J.S. Abdalla, M.D. Skipper, M.C. Buchwald, W.R. |
| Copyright Year | 1973 |
| Abstract | An ultrawide-band (UWB) pulse generator based on high-gain (lock-on mode) gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) is presented. Revised PCSS contact design shows improved performance in hold-off field, on-state switch potential, and switching jitter, while reducing the switch volume by 75% compared to previous designs. A compact laser diode module operates at 904 nm and triggers the PCSS at pulse repetition rates (PRR) of up to 2 kHz. The 625 W laser diode output power is found to be sufficient to produce switching jitter of 65 ps rms at a switched field of 80 kV/cm. The PCSS switching jitter is found to have a strong dependence upon the switched field when triggered with the laser diode module. The revised PCSS geometry is easily integrated into a compact, parallel-plate source used to drive a TEM horn impulse-radiating antenna. The radiated field has a rise time of 330 ps and an adjustable low-frequency spectrum. |
| Sponsorship | IEEE Nuclear and Plasma Sciences Society |
| Starting Page | 327 |
| Ending Page | 334 |
| Page Count | 8 |
| File Size | 154104 |
| File Format | |
| ISSN | 00933813 |
| Volume Number | 25 |
| Issue Number | 2 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1997-04-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Ultra wideband technology Gallium arsenide Photoconductivity Power semiconductor switches Jitter Diode lasers Pulse generation Laser mode locking Photoconducting devices Contacts |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Condensed Matter Physics |
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