NDLI: Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAs laser structures for /spl lambda//spl ap/800 nm

Content Provider	IEEE Xplore Digital Library
Author	Oster, A. Bugge, F. Erbert, G. Wenzel, H.
Copyright Year	1995
Abstract	InGaAsP single quantum wells (QWs) for wavelengths around 800 nm embedded in AlGaAs large optical-cavity waveguide structures are investigated by measuring modal gain spectra and broad-area (BA) laser parameters. The modal net-gain spectra are determined by the variable stripe-length method using current injection. Thick (18 nm) and nearly unstrained QWs show gain spectra without resolved subband structures. The modal gain in TE-polarization is twice as high as in TM-polarization. For thinner (13 nm) compressively strained (0.6%) QWs, the modal gain in TM-polarization and the transparency current density are lowered. For highly strained (1%) QWs, strain compensation by tensily strained GaAsP barriers improves the device performance. BA lasers with 5-nm-thick QWs with strain compensation show a 10% higher differential efficiency in comparison to structures without strain compensation.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	631
Ending Page	636
Page Count	6
File Size	140005
File Format	PDF
ISSN	1077260X
Volume Number	5
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gain measurement Quantum well lasers Pump lasers Laser excitation Optical resonators Optical pumping Capacitive sensors Diode lasers Optical waveguides Current density
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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