NDLI: Experimental analysis of temperature dependence in 1.3-/spl mu/m AlGaInAs-InP strained MQW lasers

Content Provider	IEEE Xplore Digital Library
Author	Higashi, T. Sweeney, S.J. Phillips, A.F. Adams, A.R. O'Reilly, E. Uchida, T. Fujii, T.
Copyright Year	1995
Abstract	We have analyzed experimentally the temperature and pressure dependences of the lasing characteristics of 1.3-/spl mu/m AlGaInAs-InP strained multiple-quantum-well lasers, by focusing on the ratio of the nonradiative recombination current to the total current. The temperature dependence of the radiative current was studied by observing the spontaneous emission through a window in the substrate. It was found to increase linearly with temperature, exactly as expected for an ideal quantum well over the entire temperature range from 100 to 360 K. Further, it was shown that pure radiative recombination dominated the total current below a breakpoint temperature T/sub b/ of 220 K. Above this temperature, the onset of loss processes including Auger recombination caused a superlinear increase in the threshold current. Analysis of the linear and nonlinear components allowed us to determine the ratio of the nonradiative to radiative currents at threshold. We find that, relative to similar GaInAsP/InP lasers, there is a decrease in the nonradiative component of the current, resulting in a higher characteristic temperature T/sub 0/ in the AlGaInAs-InP lasers. At 300 K, the radiative recombination current is more than 70% of the total threshold current. This result is consistent with the observation that the threshold current increases by about 8% in 12-kbar hydrostatic pressure, while in GaInAsP lasers, a decrease of 10% or more is always observed over this pressure range.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	413
Ending Page	419
Page Count	7
File Size	127095
File Format	PDF
ISSN	1077260X
Volume Number	5
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature dependence Quantum well devices Radiative recombination Semiconductor lasers Temperature distribution Spontaneous emission Threshold current Temperature sensors Current density Quantum well lasers
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers

Theoretical study of the temperature dependence of 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well lasers

Effects of well number on temperature characteristics in 1.3-/spl mu/m AlGaInAs-InP quantum-well lasers

Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-/spl mu/m InP-based strained-layer quantum-well lasers

The role of Auger recombination in InAs 1.3-/spl mu/m quantum-dot lasers investigated using high hydrostatic pressure

The temperature dependence of 1.3- and 1.5-/spl mu/m compressively strained InGaAs(P) MQW semiconductor lasers

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-/spl mu/m AlGaInAs MQW lasers

Recombination mechanisms in 1.3-/spl mu/m InAs quantum-dot lasers

Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

Experimental analysis of temperature dependence in 1.3-/spl mu/m AlGaInAs-InP strained MQW lasers

Similar Documents

Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers

Theoretical study of the temperature dependence of 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well lasers

Effects of well number on temperature characteristics in 1.3-/spl mu/m AlGaInAs-InP quantum-well lasers

Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-/spl mu/m InP-based strained-layer quantum-well lasers

The role of Auger recombination in InAs 1.3-/spl mu/m quantum-dot lasers investigated using high hydrostatic pressure

The temperature dependence of 1.3- and 1.5-/spl mu/m compressively strained InGaAs(P) MQW semiconductor lasers

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-/spl mu/m AlGaInAs MQW lasers

Recombination mechanisms in 1.3-/spl mu/m InAs quantum-dot lasers

Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

Experimental analysis of temperature dependence in 1.3-/spl mu/m AlGaInAs-InP strained MQW lasers