NDLI: Integrated GaInAsP laser diodes with monitoring photodiodes through semiconductor/air Bragg reflector (SABAR)

Content Provider	IEEE Xplore Digital Library
Author	Mukaihara, T. Yamanaka, N. Iwai, N. Funabashi, M. Arakawa, S. Ishikawa, T. Kasukawa, A.
Copyright Year	1995
Abstract	A 1.3-/spl mu/m GaInAsP laser diode (LD) is integrated with a monitoring photodiode (M-PD) through a semiconductor/air Bragg reflector (SABAR). Instead of conventional cleavage, the SABAR can provide not only Fabry-Perot resonance with high reflectivity, but also possibility of integration of laser with other functional devices. The design, fabrication, and some characteristics including threshold current, monitoring photocurrent, SABAR reflectivity as a function of the number of semiconductor/air pairs N are reported. The threshold current of ridge waveguide laser with SABAR (cavity length L=160 /spl mu/m, ridge width W=7 /spl mu/m, SABAR pairs N=3) is 20 mA. The threshold current is reduced by improving butt-coupled interface between active and passive waveguides employed in this laser and is expected 2 mA//spl mu/m. The monitoring photocurrent responds linearly with output power from the laser and 0.024 mA at laser output power of 5 mW. From the threshold characteristics, SABAR reflectivity is determined to >80%. The increase of photocurrent can be achieved by optimizing the number of SABAR pairs to N=1. We have obtained threshold current of 22 mA in the followed laser structure (L=270 /spl mu/m, W=7 /spl mu/m, N=1), and detector photocurrent of 1.13 mA (@5 mW). The experimental SABAR reflectivity is /spl sim/50%, which is estimated by threshold characteristics and efficiency of light output power. The laser has a mode field converter section, resulting in narrow beam divergence 11/spl deg/ along vertical axis. This integrated laser is very promising candidate for coming optical module in low-power consumption and low-cost access network systems.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	469
Ending Page	475
Page Count	7
File Size	317056
File Format	PDF
ISSN	1077260X
Volume Number	5
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Diode lasers Monitoring Photodiodes Waveguide lasers Reflectivity Threshold current Photoconductivity Semiconductor lasers Power generation Laser modes
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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