NDLI: Coercivity and spin reorientation transitions in Nd-Fe-B nanocomposites prepared by melt spinning

Content Provider	IEEE Xplore Digital Library
Author	Dahlgren, M. Kou, X.C. Grossinger, R. Liu, J.F. Ahmad, I. Davies, H.A. Yamada, K.
Copyright Year	1965
Abstract	Alloys of composition Nd/sub 9/Fe/sub 85/B/sub 6/, Nd/sub 11.76/Fe/sub 82.46/B/sub 5.88/, and Nd/sub 18/Fe/sub 76/B/sub 6/ were prepared by melt spinning at roll velocities from 19 to 25 m/s. The grain size distribution of rapidly quenched flakes was evaluated by means of X-ray diffraction line broadening. The average grain size of rapidly quenched Nd-Fe-B alloys is within a range from 19 to 40 nanometers and differs from the roll contact side to the free side of the flakes. For the first time, the spin reorientation transitions T/sub ST/ of nanophase Nd/sub 2/Fe/sub 14/B alloys have been determined. They were found to be lower than that of bulk Nd/sub 2/Fe/sub 14/B. The smaller the grain size, the lower is T/sub ST/. Also for the first time, the temperature dependence of the coercivity of nanophase Nd-Fe-B magnets was determined from 4.2 to 300 K by measuring hysteresis loops on a single flake in a pulsed-field magnetometer with a field strength up to 24 MA/m. The coercivity of the nanophase Nd-Fe-B has less of a temperature dependence than sintered magnets.
Sponsorship	IEEE Magnetics Society
Starting Page	2366
Ending Page	2368
Page Count	3
File Size	65179
File Format	PDF
ISSN	00189464
Volume Number	33
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Coercive force Neodymium Grain size Iron alloys Temperature dependence Magnets Pulse measurements Spinning X-ray diffraction Magnetic field measurement
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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