NDLI: Analytical Switching Loss Model for Superjunction MOSFET With Capacitive Nonlinearities and Displacement Currents for DC

Content Provider	IEEE Xplore Digital Library
Author	Castro, I. Roig, J. Gelagaev, R. Vlachakis, B. Bauwens, F. Lamar, D.G. Driesen, J.
Copyright Year	1986
Abstract	A new analytical model is presented in this study to predict power losses and waveforms of high-voltage silicon superjunction MOSFET during hard-switching operation. This model depends on datasheet parameters of the semiconductors, as well as the parasitics obtained from the printed circuit board characterization. It is important to note that it also includes original features accounting for strong capacitive nonlinearities and displacement currents. Moreover, these features demand unusual extraction of electrical characteristics from regular datasheets. A detailed analysis on how to obtain this electrical characteristic is included in this study. Finally, the high accuracy of the model is validated with experimental measurements in a double-pulse buck converter setup by using commercial SJ MOSFET, as well as advanced device prototypes under development.
Sponsorship	IEEE Power Electronics Society
Starting Page	2485
Ending Page	2495
Page Count	11
File Size	7459349
File Format	PDF
ISSN	08858993
Volume Number	31
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Analytical models Semiconductor device modeling Capacitance IP networks Integrated circuit modeling Semiconductor device measurement nonlinear circuit and current measurements Power MOSFET analytical Models capacitors
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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