NDLI: Investigation of Low-Temperature Hydrogen Plasma-Etching Processes for Silicon Wafer Solar Cell Surface Passivation in an Industrial Inductively Coupled Plasma Deposition Tool

Content Provider	IEEE Xplore Digital Library
Author	Muzhi Tang Jia Ge Wong, J. Zhe Liu Dippell, T. Zhenhao Zhang Huber, M. Doerr, M. Hohn, O. Wohlfart, P. Aberle, A.G. Mueller, T.
Copyright Year	2011
Abstract	A hydrofluoric-acid (HF)-free hydrogen plasma dry etching process prior to the deposition of intrinsic amorphous silicon onto thin n-type planar Czochralski silicon wafers is developed. The influence of substrate temperature, hydrogen flow rate, and power density on the passivation quality is investigated. Advanced characterization using spectroscopic ellipsometry and transmission electron microscopy shows the impact of the etching conditions, especially the temperature and gas flow rates, on the surface quality and interface properties. It is found that the native oxide can only be removed effectively when wafers are subjected to higher temperature or lower hydrogen flow rate. The hydrogen, oxygen, and carbon concentration profiles at the a-Si/c-Si interface of the plasma-etched samples are studied and compared with the traditionally HF cleaned interface to gain a better understanding of the reasons for the superior passivation quality.
Starting Page	10
Ending Page	16
Page Count	7
File Size	849767
File Format	PDF
ISSN	21563381
Volume Number	6
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen Plasma temperature Etching Rough surfaces Surface roughness plasma etching (PE) Heterojunction silicon solar cells HF-free process interface properties passivation
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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