NDLI: GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

Content Provider	IEEE Xplore Digital Library
Author	Simon, J. Schulte, K.L. Young, D.L. Haegel, N.M. Ptak, A.J.
Copyright Year	2011
Abstract	The high cost of high-efficiency III-V photovoltaic devices currently limits them to niche markets. Hydride vapor-phase epitaxy (HVPE) growth of III-V materials recently reemerged as a low-cost, high-throughput alternative to conventional metal- organic vapor-phase epitaxy (MOVPE) growth of high-efficiency solar cells. Previously, we demonstrated unpassivated HVPEgrown GaAs p-n junctions with good quantum efficiency and high open-circuit voltage (V_oc). In this work, we demonstrate the growth of GaInPby HVPE for use as a high-quality surface passivation layer to GaAs solar cells. Solar cells grown with GaInP window layers show significantly improved quantum efficiency compared with unpassivated cells, increasing the short-circuit current (J_SC ) of these low-cost devices. These results show the potential of low-cost HVPE for the growth of high-quality III-V devices.
Starting Page	191
Ending Page	195
Page Count	5
File Size	470821
File Format	PDF
ISSN	21563381
Volume Number	6
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Temperature measurement Photovoltaic cells Epitaxial growth Metals Substrates Gain measurement photovoltaics hydride vapor-phase epitaxy (HVPE)
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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