NDLI: Channel Profile Design of <inline-formula> <tex-math notation=LaTeX>$text{E}delta $ </tex-math></inline-formula>DC MOSFET for High Intrinsic Gain and Low <inline-formula> <tex-math notation=LaTeX>$V_{T}$ </tex-math></inline-formula> Mismatch

Content Provider	IEEE Xplore Digital Library
Author	Sengupta, S. Pandit, S.
Copyright Year	1963
Abstract	In this paper, we present a systematic procedure for the design of a channel profile of an epitaxial delta doped channel (EδDC) MOS transistor so that the intrinsic gain (A_u) is high and the threshold voltage (V_T) mismatch is low. Analytical study shows that a tradeoff relation exists between low V_T mismatch and high A_V with respect to the thickness of the channel region. Therefore, careful selection of the design parameters is essential in order to have an optimum performance. The performance characteristics of the designed device are subsequently verified through Technology Computer Aided Design simulations. In order to demonstrate the benefits of using optimized EδDC transistor, we compare its performance with that of a reference deeply depleted channel MOS transistor. The performance improvement of using optimized EδDC transistor with respect to the chosen objectives is clearly explained.
Sponsorship	IEEE Electron Devices Society
Starting Page	551
Ending Page	557
Page Count	7
File Size	1975898
File Format	PDF
ISSN	00189383
Volume Number	63
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Doping Epitaxial growth Logic gates Threshold voltage Epitaxial layers VT mismatch. Channel profile optimization epitaxial delta doped channel (EδDC) intrinsic gain screening phenomenon $V_{T}$ mismatch epitaxial delta doped channel ( $\text{E}\delta $ DC)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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