NDLI: Channel mobility and threshold voltage characterization of 4H-SiC MOSFET with antimony channel implantation

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2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

Table of contents

Performance and cost considerations for SiC-based HEV traction inverter systems

An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT

An E-mode GaN HEMTs based three-level bidirectional DC/DC converter used in Robert Bosch DC-grid system

Consideration of flyback converter using GaN devices

Cross conduction analysis for enhancement-mode 650-V GaN HFETs in a phase-leg topology

Assessment of PSpice model for commercial SiC MOSFET power modules

An indirect matrix converter based 97%-efficiency on-board level 2 battery charger using E-mode GaN HEMTs

2-Phase 2-stage capacitor-less gate driver for Gallium Nitride Gate Injection Transistor for reduced gate ringing

Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications

Loss analysis of GaN devices in an isolated bidirectional DC-DC converter

Sizing SiC storage inverters for fast grid frequency support

A novel charge based SPICE model for nonlinear device capacitances

Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT

Simulation of a power package with underfill resin and silicon gel

Study of the effects of barrier and passivation nitride stresses on AlGaN/GaN HEMT performance using TCAD simulation

Using SiC MOSFETs to improve reliability of EV inverters

Two year reliability validation of GaN power semiconductors in low voltage power electronics applications

Design of GaN transistor-based class E DC-DC converter with resonant rectifier circuit

Channel mobility and threshold voltage characterization of 4H-SiC MOSFET with antimony channel implantation

Floating body effects in carbon doped GaN HEMTs

Realization of high speed switching of SiC power devices in voltage source converters

Testing of a novel medium voltage impedance measurement unit

SiC MOSFETs connected in series with active voltage control

Turn-on capability of 22 kV SiC Emitter Turn-off (ETO) Thyristor

Methodology to qualify silicon carbide MOSFETs for single shot avalanche events

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

Design of a high-density, diode-less 1.2 kV, 90 A SiC MOSFET half-bridge power module

An optimized gate-loop layout for multi-chip SiC MOSFET power modules

Activation energy of frequency-dependent drain-conductance of AlGaN/GaN HEMT evaluated with low frequency S-parameters

6.9-cm Active-area interconnected wafer 4 kV PiN diode pulsed at 55 kA

High frequency eGaN monolithic half bridge IC based 12 VIN to 1 VOUT point of load converter

Study of the turn-on of various high-voltage SiC thyristors

DC ripple current reduction on multilevel, multiport, single-phase DC/AC converter for renewable energy applications

Design considerations for high power density/efficient PCB embedded inductor

Excess carrier mapping technique — A new parameter extraction method for 4H-SiC ambipolar power devices

High power density single phase inverter using GaN FETS and active power decoupling for Google little box challenge

Efficiency optimization for a power factor correction (PFC) rectifier with gallium nitride transistor

Comparative evaluation of 6kV Si and SiC power devices for medium voltage power electronics applications

Semiconductor-based galvanic isolation

6.5kV enhancement mode SiC JFET based power module

Power switching transistors based on GaN and AlGaN channels

Thermal characterization of high voltage GaN-on-Si Schottky Barrier Diodes (SBD) for designing an on-chip thermal shutdown circuit for a power HEMT

Characterization and prediction of the avalanche performance of 1.2 kV SiC MOSFETs

Understanding switching losses in SiC MOSFET: Toward lossless switching

Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching

Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically triggered 1200 V solid-state-circuit-breakers

3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive

Influences of DBC metal layout on the reliability of IGBT power modules

Evaluation of 600 V GaN based gate injection transistors for high temperature and high efficiency applications

Package influence on the simulated performance of 1.2 kV SiC modules

A high efficiency inverter design for Google little box challenge

Driving and sensing design of an enhancement-mode-GaN phaseleg as a building block

Key structure and process for pulsed power switch SiC RSD

Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena

Reliability and failure analysis of Cu-Sn transient liquid phase sintered (TLPS) joints under power cycling loads

HV GaN reliability and status

A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application

Short circuit robustness of 1200 V SiC switches

Comparison of energy losses in high-current 1700 V switches

A 1 MHz eGaN FET based 4-switch buck-boost converter for automotive applications

Recent developments in GaN-based optical rapid switching semiconductor devices

Optimum gate driver design to reach SiC-MOSFET's full potential — Speeding up to 200 kV/μs

Ultra-low inductance phase leg design for GaN-based three-phase motor drive systems

Design of a high-bandwidth Rogowski current sensor for gate-drive shortcircuit protection of 1.7 kV SiC MOSFET power modules

Operation analysis of digital control based MHz totem-pole PFC with GaN device

Switching and robustness analysis of 10 kV SiC BJTs

Evaluation and applications of 600V/650V enhancement-mode GaN devices

Design of a silicon-WBG hybrid switch

Development of software to design passive filters for EMI suppression in SiC DC fed motor drives

Gate drive development and empirical analysis of 10 kV SiC MOSFET modules

Advances in SiC-based power conversion for shipboard electrical power systems

A high temperature comparator in CMOS SiC

Performance evaluation and characterization of 6500V asymmetric SiC NPNP Thyristor based current switch

A SiC 8 Bit DAC at 400°C

Application and reliability analysis of sintered silver preforms for die attachment of wide bandgap devices

Performance evaluation of series connected 1700V SiC MOSFET devices

Wide bandgap semiconductor power devices for energy efficient systems

2014 IEEE Workshop on Wide Bandgap Power Devices and Applications

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

Channel mobility and threshold voltage characterization of 4H-SiC MOSFET with antimony channel implantation

Content Provider	IEEE Xplore Digital Library
Author	Yongju Zheng Isaacs-Smith, T. Ahyi, A.C. Dhar, S. Mooney, P.M.
Copyright Year	2015
Description	Author affiliation: Dept. of Phys., Auburn Univ., Auburn, AL, USA (Yongju Zheng; Isaacs-Smith, T.; Ahyi, A.C.; Dhar, S.) \|\| Phys. Dept., Simon Fraser Univ., Burnaby, BC, Canada (Mooney, P.M.)
Abstract	In this work, we have investigated the effect of Antimony counter-doping in channel region of 4H-SiC MOSFETs with moderately doped p-body, relevant for power applications. Using this process, improved sub-threshold slope and high channel mobility have been achieved in conjunction with high threshold voltage. Our results indicate that the improvement in transport is associated with Sb donors close to the surface, which have negligible effect on interface trap density.
Starting Page	253
Ending Page	256
File Size	457516
Page Count	4
File Format	PDF
e-ISBN	9781467378857
DOI	10.1109/WiPDA.2015.7369270
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-11-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Channel mobility MOSFET Annealing Silicon carbide Counter-doping Doping Logic gates P-body doping Antimony Threshold voltage 4H-SiC
Content Type	Text
Resource Type	Article

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