NDLI: The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress

Content Provider	IEEE Xplore Digital Library
Author	Sungju Choi Hyeongjung Kim Chunhyung Jo Hyun-Suk Kim Sung-Jin Choi Dong Myong Kim Park, J. Dae Hwan Kim
Copyright Year	1980
Abstract	Thin-film transistors using In-Ga-Zn-O (IGZO) semiconductors were evaluated under positive bias stress with different gate and drain voltages (V_GS and V_DS, respectively). The transfer characteristics with respect to stress time were examined, focusing on the threshold voltage (V_T) values obtained when the source and drain electrodes are interchanged during readout (forward and reverse V_DS sweep). The V_T values shift toward either negative or positive values during stress, while transitions from negative to positive shifts are also observed. The negative V_T shift under positive bias stress is interpreted to occur by the generation of donor-like states related to ionized oxygen vacancies. On the other hand, positive V_T shifts result from the trapping of electrons near the IGZO/gate insulator interface. The transitions from negative to positive V_T shift are believed to result from the local electron trapping mechanism that gradually takes over donor-like state creation. From the experimental results and TCAD device simulation, it is suggested that a competition occurs between donor-like state creation and electron trapping. The relative magnitudes of the V_GS and V_DS fields determine which mechanism dominates, providing an analytical insight for the design of stable devices for driving transistors in AMOLED backplanes.
Sponsorship	IEEE Electron Devices Society
Starting Page	1336
Ending Page	1339
Page Count	4
File Size	10094149
File Format	PDF
ISSN	07413106
Volume Number	36
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Stress Charge carrier processes Insulators Degradation Thin film transistors Indium gallium zinc oxide Sub-gap states Thin film transistor (TFT) In-Ga-Zn-O (IGZO) Charge trapping Current stress sub-gap states charge trapping current stress
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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