NDLI: Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on <inline-formula> <tex-math notation=LaTeX>$V_{textrm {th}}$ </tex-math></inline-formula> Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo Approach

Content Provider	IEEE Xplore Digital Library
Author	Noda, T. Vrancken, C. Vandervorst, W.
Copyright Year	1963
Abstract	An analysis of pocket dopant deactivation and its impact on V_th variation for scaled Si devices using an atomistic kinetic Monte Carlo approach are shown in this paper. B 5 keV, 5 × 10¹³/cm² + As 1 keV, 1 × 10¹⁵/cm² implants were used for B pocket deactivation study. An effect of laser annealing (LA) before spike-Rapid Thermal Annealing (RTA) was investigated. In case of B pocket implant, a stable B cluster configuration is changed from B₃I (>1020 °C) to BI₂ at spike-RTA temperature ~1020 °C. BI₂ is a source of B pocket deactivation with lower temperature than 1020 °C. LA before low-temperature spike-RTA (<;1020 °C) is useful to improve B pocket activation. The V_th mismatch figure of merit extracted from Pelgrom plot (Avt) degradation in nFET is shown as spike-RTA temperature is reduced. LA before spike-RTA shows a better short channel effect with lower drain-induced barrier lowering in nFET. LA + spike-RTA at 1000 °C shows better Avt than spike-RTA-only. The difference of pocket deactivation is one of possible important reasons for the higher V_th mismatch for nFET than for pFET.
Sponsorship	IEEE Electron Devices Society
Starting Page	1789
Ending Page	1795
Page Count	7
File Size	2217068
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Implants Annealing Semiconductor process modeling Temperature measurement Junctions Lasers Silicon Vth variation. Diffusion kinetic Monte Carlo (KMC) MOSFETs semiconductor ultrashallow junctions (USJs) $V_{\textrm {th}}$ variation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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