NDLI: Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Content Provider	IEEE Xplore Digital Library
Author	Ramanan, N. Bongmook Lee Misra, V.
Copyright Year	1963
Abstract	Reliability of dielectrics is a critical concern in GaN metal-oxide-semiconductor-heterojunction-field-effect transistor (MOS-HFET) devices for use in high-voltage power and RF applications. Accurate characterization of interface traps is essential toward developing an understanding of the reliability issues associated with this system and to evaluate the effectiveness of different dielectrics proposed for use in the gate-stack or the passivation of the access regions. Using small-signal equivalent circuit models and TCAD simulations, it is found that conductance and capacitance methods for trap density estimation potentially have severely constrained detection limits and can probe only shallow traps. In contrast, a pulsed-IV method, used along with UV irradiation, can accurately detect a wide range of trap densities over the entire wide bandgap. The effectiveness of this method is also experimentally demonstrated using an AlGaN/GaN MOS-HFET device with HfAlO gate dielectric.
Sponsorship	IEEE Electron Devices Society
Starting Page	546
Ending Page	553
Page Count	8
File Size	2104206
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Capacitance Aluminum gallium nitride Dielectrics Logic gates III-V semiconductor materials Electron traps semiconductor-insulator interfaces. Heterojunctions millimeter wave transistors power transistors semiconductor device reliability semiconductor-insulator interfaces
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al₂O₃/GaN/AlGaN/AlN/GaN Capacitors

Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements

Atomic Layer Deposition of $hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs

AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

Al₂O₃/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V

Modeling of the Gate Leakage Current in AlGaN/GaN HFETs

Low RC-Constant Perforated-Channel HFET

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

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