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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yong Jun Kim Woo Young Choi |
| Copyright Year | 1963 |
| Abstract | The application of nanoelectromechanical (NEM) memory switches to field-programmable gate arrays (FPGAs) has been proposed for the first time. NEM memory switches replace MOSFETs and NEM relay switches in connection blocks and switch boxes. The proposed NEM-memory-based FPGAs feature higher speed, lower energy consumption, and smaller chip area than the other FPGAs. In addition, compared with the previously reported NEM-relay-based FPGAs, they show nonvolatile storage of signal paths and stable rail-to-rail signal voltage swing because data signal paths are maintained by adhesion force. In addition, the contact resistance (Rco) of a NEM memory switch is lower than that of a NEM relay switch thanks to larger contact area. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 673 |
| Ending Page | 679 |
| Page Count | 7 |
| File Size | 2684944 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 62 |
| Issue Number | 2 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Field programmable gate arrays Relays Nonvolatile memory Logic gates Energy consumption MOSFET Switches reconfigurable logic. Adhesion force nanoelectromechanical (NEM) memory switch nonvolatile operation reconfigurable logic |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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