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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yuchen Du Han Liu Neal, A.T. Mengwei Si Ye, P.D. |
| Copyright Year | 1980 |
| Abstract | For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors is investigated. A 2.6 times reduction in sheet resistance and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON-current and 50% improvement in extrinsic field-effect mobility. The threshold voltage confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2 transistors and its potential applications in layer-structured semiconducting 2-D crystals. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 1328 |
| Ending Page | 1330 |
| Page Count | 3 |
| File Size | 763227 |
| File Format | |
| ISSN | 07413106 |
| Volume Number | 34 |
| Issue Number | 10 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-10-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Doping Field effect transistors Graphene Resistance Threshold voltage Contact resistance threshold voltage doping ${\rm MoS}_{2}$ MOSFET sheet resistance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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