NDLI: The Advantages of AlGaN-Based UV-LEDs Inserted With a p-AlGaN Layer Between the EBL and Active Region

Content Provider	IEEE Xplore Digital Library
Author	Jun Zhang Wu Tian Feng Wu Weiyi Yan Hui Xiong Jiangnan Dai Yanyan Fang Zhihao Wu Changqing Chen
Copyright Year	2009
Abstract	The advantages of ultraviolet light-emitting diodes (LEDs) inserted with a p-AlGaN layer, whose Al mole composition is less than that of the last barrier, between the last barrier and the electron blocking layer have been investigated by using the Crosslight APSYS programs. The results show that the output power and the internal quantum efficiency of the proposed LEDs are improved. Furthermore, the efficiency droop is also mitigated effectively. Based on the analysis of electrical and optical characteristics, these improvements are mainly attributed to the relatively higher effective barrier height against the escape of electrons and an increased hole concentration in the quantum wells by inserting a hole reservoir near the active region. In addition, the optimized Al mole composition of this inserted layer has been also studied in detail, and the optimized Al mole composition has been achieved.
Starting Page	1600310
Ending Page	1600310
Page Count	1
File Size	1136596
File Format	PDF
ISSN	19430655
Volume Number	5
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-08-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiative recombination Light emitting diodes Aluminum gallium nitride Power generation Charge carrier processes Doping Quantum well devices Crosslight p-AlGaN inserted layer ultraviolet light-emitting diode (UV-LED) efficiency droop alleviation
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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