NDLI: Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

Content Provider	IEEE Xplore Digital Library
Author	Yang Li Shengchang Chen Wu Tian Zhihao Wu Yanyan Fang Jiangnan Dai Changqing Chen
Copyright Year	2009
Abstract	In order to improve the performance of deep ultraviolet light-emitting diodes (UV LEDs), the effects of different electron blocking layers (EBLs) on the performance of Al_xGa_1-xN-based deep UV LEDs at 310 nm have been studied through a numerical simulation. The simulation results show that the adoption of EBLs is critical to improve the device performance. In comparison with a conventional structure using EBL with constant Al composition (0.7), the device structure with an Al-content graded Al_xGa_1-xN (from 0.9 to 0.4 in the growth direction) EBL possesses numerous advantages such as lower working voltage, higher internal quantum efficiency, and less efficiency droop under high-current injection. By detailedly analyzing the profiles of energy band diagrams, distributions of carrier concentration, and electron current density, the advantages of Al-content graded Al_xGa_1-xN EBL are attributed to the resulting lower resistivity, higher barrier for electron leakage, and simultaneously reduced barrier for hole injection compared with the conventional EBL with constant Al composition.
Starting Page	8200309
Ending Page	8200309
Page Count	1
File Size	789075
File Format	PDF
ISSN	19430655
Volume Number	5
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Aluminum gallium nitride Charge carrier processes III-V semiconductor materials Gallium nitride Electric potential ultraviolet light-emitting diodes III-Nitride graded AlGaN electron blocking layer
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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