NDLI: An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown

Content Provider	IEEE Xplore Digital Library
Author	Jingjing Xie Jo Shien Ng Chee Hing Tan
Copyright Year	2009
Abstract	Dark current and avalanche gain M on AlAs_0.56Sb_0.44 (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) avalanche photodiodes (APDs) were measured at temperatures ranging from 77 K to 300 K. To avoid possible ambiguity in breakdown voltage due to edge breakdown and tunneling current, a phase-sensitive detection method with a tightly focused light spot in the center of the device was employed to measure M accurately. An extrapolation of 1/M to zero was used to deduce the breakdown voltage, from which the temperature coefficient of breakdown voltage Cbd was derived. The value of C_bd 1/4 8 mV/K, obtained for AlAsSb SAM APDs, is much smaller than that for commercial Si and InGaAs/InP APDs, as well as other SAM APDs in the literature, demonstrating the potential of AlAsSb avalanche regions in improving the thermal stability of APDs.
Starting Page	6800706
Ending Page	6800706
Page Count	1
File Size	298088
File Format	PDF
ISSN	19430655
Volume Number	5
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-08-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Temperature dependence Indium gallium arsenide Current measurement Dark current Tunneling Electric breakdown AlAsSb avalanche photodiodes (APDs)
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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