NDLI: Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration

Content Provider	IEEE Xplore Digital Library
Author	Koricic, M. Suligoj, T. Mochizuki, H. Morita, S. Shinomura, K. Imai, H.
Copyright Year	1963
Abstract	Fabrication of a novel high-voltage double-emitter horizontal current bipolar transistor (HCBT) structure integrated with the standard 0.18-μm CMOS and high-speed HCBT is presented. The device takes advantage of 3-D collector charge sharing to achieve full depletion of the intrinsic collector region and to limit the electric field at the base-collector junction. Transistors with BV_CEO = 12.6 V, f_T ·BV_CEO = 160 GHz·V , and β·VA = 28 700 V are demonstrated. The device is fabricated in HCBT BiCMOS process flow without the use of additional lithography masks and represents a zero-cost solution for integration of a high-voltage bipolar device.
Sponsorship	IEEE Electron Devices Society
Starting Page	3647
Ending Page	3650
Page Count	4
File Size	940129
File Format	PDF
ISSN	00189383
Volume Number	59
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bipolar transistors BiCMOS integrated circuits CMOS integrated circuits Transistors High-voltage techniques Fabrication horizontal current bipolar transistor (HCBT) BiCMOS technology charge sharing fully depleted collector high-voltage bipolar transistors
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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