NDLI: Errors Limiting Split-<formula formulatype=inline><tex Notation=TeX>$CV$</tex></formula> Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Morassi, L. Verzellesi, G. Han Zhao Lee, J.C. Veksler, D. Bersuker, G.
Copyright Year	1963
Abstract	The accuracy of the split-CV mobility extraction method is analyzed in buried-channel InGaAs MOSFETs with a Al₂O₃ gate dielectric and an InP barrier, through a “simulated experiment” procedure using 2-D numerical device simulations that are preliminarily calibrated against experimental I-V and CV curves. The different error sources limiting the method accuracy are pointed out. It is suggested that, as a result of these errors, the split- CV method can appreciably underestimate the actual channel mobility in these devices, with an error of >;20% and >;50% on peak mobility and high-V_GS mobility, respectively. The method should therefore not be adopted for accurate mobility measurement in this operating regime but only as a fast response technique providing a conservative estimation of channel mobility. Moreover, the method provides mobility values that rapidly drop below the peak value for decreasing V_GS. It is shown that this behavior can be an artifact of the extraction method, which may mask physical mechanisms causing a real mobility drop with decreasing channel carrier density, such as Coulomb scattering mechanisms. This poses limitations to the adoption of split-CV mobility as a reference for mobility model assessment in this operating regime. The proposed methodology can be applied to other III-V FETs, including both heterostructure-based and inversion-mode devices.
Sponsorship	IEEE Electron Devices Society
Starting Page	1068
Ending Page	1075
Page Count	8
File Size	577193
File Format	PDF
ISSN	00189383
Volume Number	59
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Logic gates Accuracy Indium gallium arsenide Indium phosphide Aluminum oxide Current measurement III-V metal–oxide–semiconductor field-effect transistors (MOSFETs) InGaAs mobility split- $CV$ measurements
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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