NDLI: Improved Sensitivity of AlGaN/GaN Field Effect Transistor Biosensors by Optimized Surface Functionalization

Content Provider	IEEE Xplore Digital Library
Author	Xuejin Wen Schuette, M.L. Gupta, S.K. Nicholson, T.R. Lee, S.C. Wu Lu
Copyright Year	2001
Abstract	In this paper, we optimize the AlGaN surface oxidation methods for AlGaN/GaN heterostructure field effect transistor (HFET) biological sensors. Reactive ion etching oxygen plasma, inductively coupled oxygen plasma, and piranha solution are used to oxidize AlGaN surface. After oxidation, X-ray photoelectron spectroscopy and water contact angle measurements are used to check oxidation effectiveness. Labeled streptavidin (SA) molecules are bound to the oxidized surface through linker molecules for comparison of surface modification effectiveness. Schottky diodes are fabricated to investigate the impacts of oxidation processes on electrical properties, such as Schottky barrier heights, sheet carrier concentrations, and interface trap densities. The results show that the inductively coupled plasma oxidation process has a superior behavior compared to the reactive ion etching oxygen plasma and piranha solution oxidation processes. AlGaN/GaN HFET protein sensors fabricated using the inductively coupled plasma oxidation process have exhibited improved sensitivity. An SA solution with the concentration as low as 4.73 pM were successfully detected.
Sponsorship	IEEE Sensors Council
Starting Page	1726
Ending Page	1735
Page Count	10
File Size	1464462
File Format	PDF
ISSN	1530437X
Volume Number	11
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Surface treatment Iterative closest point algorithm Gallium nitride Plasmas Surface morphology HEMTs surface functionalization Biosensor field-effect transistor (FET) GaN
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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