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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mehrad, M. Orouji, A.A. |
| Copyright Year | 2001 |
| Abstract | In this paper, we have proposed a new partially cylindrical fin field-effect transistor (PC-FinFET), where the upper region of fins has partially cylindrical shape and the lower region of fins, as conventional FinFETs (C-FinFETs), is cubic. The PC-FinFET devices are shown to have better series resistance, hot electron, and subthreshold slope characteristics. Moreover, our simulation result demonstrates an improved output characteristic of the proposed structure due to reduction of self-heating effect. Due to the cylindrical structure of the upper fin region and deleting corner effects in the region, the heat can flow easily, and device temperature decreases. Furthermore, our simulation with 3-D and two-carrier device simulator shows that short-channel effects are controlled better in PC-FinFET than in C-FinFET, which can affect on the performance of the nanoscale devices. |
| Sponsorship | IEEE Electron Devices Society IEEE Reliability Society |
| Starting Page | 271 |
| Ending Page | 275 |
| Page Count | 5 |
| File Size | 376683 |
| File Format | |
| ISSN | 15304388 |
| Volume Number | 10 |
| Issue Number | 2 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-06-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | FETs Nanoscale devices FinFETs Electrons Temperature Degradation Circuit simulation Shape Hot carrier effects MOSFETs 2-D simulation Drain-induced barrier lowering (DIBL) FinFET hot-carrier effect self-heating effect series resistance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Safety, Risk, Reliability and Quality Electrical and Electronic Engineering |
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