NDLI: RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using <formula formulatype=inline><tex Notation=TeX>$(hbox{In}_{x}hbox{Ga}_{1 - x}hbox{As})_{m}/(hbox{InAs})_{n}$</tex></formula> Superlattice-Channel Structure for Millimeter-Wave Applications

Content Provider	IEEE Xplore Digital Library
Author	Chien-I Kuo Heng-Tung Hsu Yu-Lin Chen Chien-Ying Wu Chang, E.Y. Miyamoto, Y. Wen-Chung Tsern Sahoo, K.C.
Copyright Year	1980
Abstract	High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (In_xGa_1-xAs)_m/(InAs)_n superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular In_xGa_1 - xAs channel, the superlattice-channel HEMTs showed an outstanding performance due to the high electron mobility and better carrier confinement in the (In_xGa_1-xAs)_m/(InAs)_n channel layer. When biased at 1.2 V, the current gain cutoff frequency (f_T) and the maximum oscillation frequency (f_max) were extracted to be 304 and 162 GHz, respectively. As for noise performance, the device demonstrated a 0.75-dB minimum noise figure (NF_min) with an associated gain of 9.6 dB at 16 GHz. Such superior performance has made the devices with a superlattice channel well suitable for millimeter-wave applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	677
Ending Page	679
Page Count	3
File Size	458831
File Format	PDF
ISSN	07413106
Volume Number	31
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency HEMTs MODFETs Superlattices Cutoff frequency Noise figure mHEMTs Current density Transconductance Electron mobility superlattice channel High-electron mobility transistors (HEMTs) InAs InGaAs
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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