NDLI: Modeling of Stress-Retarded Thermal Oxidation of Nonplanar Silicon Structures for Realization of Nanoscale Devices

Content Provider	IEEE Xplore Digital Library
Author	Fa-Jun Ma Rustagi, S.C. Samudra, G.S. Hui Zhao Singh, N. Guo-Qiang Lo Dim-Lee Kwong
Copyright Year	1980
Abstract	Accurate modeling of stress-retarded orientation-dependent 2-D oxidation is carried out by matching the experimental and simulated oxide thicknesses of silicon FIN nanostructures over a wide range of temperatures and times in dry oxygen. Experimentally observed initial oxidation rate enhancement, orientation-dependent stress retardation, and self-limiting phenomena are modeled, and a new universal stress retardation parameter set is obtained for the first time. The new parameter set has been validated against oxidation experiments presented here and those reported in the literature. Furthermore, the new model is used to explore silicon nanowire shape engineering.
Sponsorship	IEEE Electron Devices Society
Starting Page	719
Ending Page	721
Page Count	3
File Size	244650
File Format	PDF
ISSN	07413106
Volume Number	31
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal stresses Oxidation Silicon Nanoscale devices Nanostructures Semiconductor device modeling Shape Microelectronics Temperature distribution Predictive models 2-D oxidation Nanowire (NW) orientation dependence self-limiting shape engineering stress retardation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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