NDLI: Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

Content Provider	IEEE Xplore Digital Library
Author	Ťapajna, M. Simms, R.J.T. Yi Pei Mishra, U.K. Kuball, M.
Copyright Year	1980
Abstract	A new methodology is developed to determine spatial location and properties of traps generated by electrical stressing of AlGaN/GaN high-electron mobility transistors, based on integrated optical and electrical analysis. Mild off-state stress increases irreversibly the number of traps located in the near-surface AlGaN region at the gate edge. A deep level with 0.45-eV activation energy in fresh devices changes its nature to interacting defect after the off-state stress, accompanied by an activation energy change. These results are consistent with trap generation in the near-surface AlGaN region at the gate edge related to high electric field and gate leakage current, as stressing does not result in the generation of cracks in the AlGaN layer.
Sponsorship	IEEE Electron Devices Society
Starting Page	662
Ending Page	664
Page Count	3
File Size	396313
File Format	PDF
ISSN	07413106
Volume Number	31
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated optics Charge carrier processes Aluminum gallium nitride Gallium nitride HEMTs MODFETs Stress Optical buffering Degradation Electroluminescence trapping Electrical stress electroluminescence (EL) GaN high-electron mobility transistor (HEMT) impurity diffusion reliability
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Identification of electronic traps in AlGaN/GaN HEMTs using UV light-assisted trapping analysis

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

Investigations on the influence of traps in AlGaN/GaN HEMTs

On-chip optical pumping of deep traps in AlGaN/GaN-on-Si power HEMTs

Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Theoretical Investigation of Trigate AlGaN/GaN HEMTs

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

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