NDLI: Effective area of thin guarded electrode in determining of permittivity and volume resistivity

Content Provider	IEEE Xplore Digital Library
Author	Lisowski, M. Skopec, A.
Copyright Year	1994
Abstract	Effective area of guarded electrode is always larger than its geometrical area as a result of fringing effect. In most standards concerning permittivity and volume resistivity measurements, an increase in the effective fringing is assumed as a half of the width of the gap between the guarded electrode and the guard electrode (then the factor B = 1). In some standards, the increase calculated from Amey relation, is assumed to be smaller (B < 1). The Amey relation is exact only for sample permittivity epsivrarrinfin . It is correct to apply the relation to calculate the volume resistivity, but it is incorrect to use it to calculate the permittivity of a sample. In this paper, a proper relation for the factor B has been derived analytically for thin electrodes made usually by thin film technology. The factor B can be used to calculate the permittivity of samples with arbitrary value of epsiv. Appropriate changes into the standard IEC 60250 and into other standards concerning permittivity measurements are proposed.
Sponsorship	National Natural Science Foundation of China (NSFC) Region Centre Ville de Tours Conseil General D'Indre et Loire ABB IEEE Sandia National Laboratories TOSHIBA
Starting Page	24
Ending Page	31
Page Count	8
File Size	282326
File Format	PDF
ISSN	10709878
Volume Number	16
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrodes IEC standards Measurement standards Permittivity measurement Dielectric measurements Electrical resistance measurement Conductivity measurement Volume measurement Dielectric thin films Rubber Dielectric materials, permittivity, resistivity, measurement, electrodes, standardization.
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

The effective area of measurement electrode in volume resistivity and permittivity of solid dielectrics measurements

Changes proposed for the IEC 60093 Standard concerning measurements of the volume and surface resistivities of electrical insulating materials

Measurements of Permittivity, Dielectric Loss Tangent, and Resistivity of Float-Zone Silicon at Microwave Frequencies

Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors

Technique for extracting dielectric permittivity from data obscured by electrode polarization

Differential open resonator method for permittivity measurements of thin dielectric film on substrate

A versatile three-terminal test cell for dielectric measurements on insulating liquids

Current developments in contactless measurements of high quality materials for microelectronics and nanotechnology employing dielectric resonator techniques

Automatic Digital Method for Measuring the Permittivity of Thin Dielectric Films

Effective area of thin guarded electrode in determining of permittivity and volume resistivity

Similar Documents

The effective area of measurement electrode in volume resistivity and permittivity of solid dielectrics measurements

Changes proposed for the IEC 60093 Standard concerning measurements of the volume and surface resistivities of electrical insulating materials

Measurements of Permittivity, Dielectric Loss Tangent, and Resistivity of Float-Zone Silicon at Microwave Frequencies

Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors

Technique for extracting dielectric permittivity from data obscured by electrode polarization

Differential open resonator method for permittivity measurements of thin dielectric film on substrate

A versatile three-terminal test cell for dielectric measurements on insulating liquids

Current developments in contactless measurements of high quality materials for microelectronics and nanotechnology employing dielectric resonator techniques

Automatic Digital Method for Measuring the Permittivity of Thin Dielectric Films

Effective area of thin guarded electrode in determining of permittivity and volume resistivity