NDLI: Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

Content Provider	IEEE Xplore Digital Library
Author	Ponton, D. Palestri, P. Esseni, D. Selmi, L. Tiebout, M. Parvais, B. Siprak, D. Knoblinger, G.
Copyright Year	2004
Abstract	This paper deals with the design of single-stage differential low-noise amplifiers for ultra-wideband (UWB) applications, comparing state-of-the-art planar bulk and silicon-on-insulator (SOI) FinFET CMOS technologies featuring 45-nm gate length. To ensure a broadband input impedance matching, the g _m-boosted topology has been chosen. Furthermore, the amplifiers have been designed to work over the whole UWB band (3.1-10.6 GHz), while driving a capacitive load, which is a realistic assumption for direct conversion receivers where the amplifier directly drives a mixer. The simulations (based on compact models obtained from preliminary measurements) highlight that, at the present stage of the technology development, the planar version of the circuit appears to outperform the FinFET one. The main reason is the superior cutoff frequency of planar devices in the inversion region, which allows the achievement of noise figure and voltage gain comparable to the FinFET counterpart, with a smaller power consumption.
Sponsorship	IEEE Circuits and Systems Society
Starting Page	920
Ending Page	932
Page Count	13
File Size	1764423
File Format	PDF
ISSN	15498328
Volume Number	56
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS technology Ultra wideband technology Low-noise amplifiers FinFETs Silicon on insulator technology Impedance matching Topology Broadband amplifiers Mixers Circuit simulation ultra-wideband (UWB) $g_{m}$-boosted low-noise amplifier (LNA) multi resonance planar bulk RFCMOS silicon-on-insulator (SOI) FinFET
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Hardware and Architecture

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