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Content Provider | IEEE Xplore Digital Library |
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Author | Bin Yu Xuhui Sun Sanghyun Ju Janes, D.B. Meyyappan, M. |
Copyright Year | 2002 |
Abstract | We report fabrication of phase change random access memory (PRAM) using nanowires (NWs) of GeTe and In2Se3. NWs were grown by a vapor-liquid-solid technique and ranged from 40 to 80 nm in diameter and several micrometers long. A dynamic switching ratio (on/off ratio) of 2200 and 2 times 105 was realized for GeTe and indium selenide devices, respectively. The programming power for the RESET operation is only tens of microwatts compared to the milliwatt power levels required by the conventional thin-film-based PRAM. |
Sponsorship | IEEE Nanotechnology Council |
Starting Page | 496 |
Ending Page | 502 |
Page Count | 7 |
File Size | 482712 |
File Format | |
ISSN | 1536125X |
Volume Number | 7 |
Issue Number | 4 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2008-07-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Phase change memory Phase change random access memory Phase change materials Nonvolatile memory Sun Nanowires Scalability Crystalline materials Optical materials High speed optical techniques phase change random access memory (PRAM) Chalcogenide nanoelectronics nanowires (NWs) nanowires chalcogenide |
Content Type | Text |
Resource Type | Article |
Subject | Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications |
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