NDLI: Compact Surface Potential Model for FD SOI MOSFET Considering Substrate Depletion Region

Content Provider	IEEE Xplore Digital Library
Author	Agarwal, P. Saraswat, G. Kumar, M.J.
Copyright Year	1963
Abstract	In this paper, by solving the 1-D Poisson equation using appropriate boundary conditions, we report a closed-form surface potential solution for all the three surfaces (gate oxide-silicon film interface, silicon-film-buried oxide interface, and buried oxide-substrate interface) of fully depleted silicon-on-insulator (SOI) MOSFETs by considering the effect of substrate charge explicitly. During the model derivation, it is assumed that the silicon film is always fully depleted and the back silicon film surface is never inverted. The calculated values of the surface potentials obtained from the proposed model agree well with the iterative solution of exact Poisson equation with a maximum relative error bound of 0.3%. In the entire model, only two square roots, one exponential, and two logarithm terms are used and the continuity and differentiability of the resultant surface potential solutions are ensured making the proposed model computationally efficient.
Sponsorship	IEEE Electron Devices Society
Starting Page	789
Ending Page	795
Page Count	7
File Size	271435
File Format	PDF
ISSN	00189383
Volume Number	55
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon MOSFET circuits Electric potential Substrates Films Integrated circuit modeling Mathematical model threshold voltage Compact modeling fully depleted silicon-on-insulator (SOI) MOSFET numerical solution surface potential
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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