NDLI: Small-Signal Modeling of Microwave MESFETs Using RBF-ANNs

Content Provider	IEEE Xplore Digital Library
Author	Weatherspoon, M.H. Martinez, H.A. Langoni, D. Foo, S.Y.
Copyright Year	1963
Abstract	This paper presents a comprehensive approach to accurate and efficient modeling of microwave active devices such as metal semiconductor field effect transistors (MESFETs) using artificial neural networks (ANNs). A radial basis function (RBF)-ANN model is developed for S-parameters and equivalent circuit parameters (ECPs) of MESFETs. The training and testing data for these models are obtained from the measured two-port scattering parameters and extracted ECPs of a 0.25 times 200 mum (4 times 50 mum) gallium arsenide MESFET. A four- input eight-output ANN is used to model the S-parameters of a microwave MESFET versus bias, temperature, and frequency, and a three-input eight-output ANN is used to model the ECPs of a microwave MESFET versus bias and temperature. Comparisons of measured and modeled data are presented, and the results show very good agreement. The average relative errors using the RBF-ANN models for the S-parameters and ECPs were 0.81% and 0.77%, respectively, which both represent about 60% reduction in error when compared to backpropagation ANN models of similar parameters of the same device.
Sponsorship	IEEE Instrumentation and Measurement Society Bureau international des poids et mesures IEEE International Bureau of Weights and Measures (BIPM) URSI NBS Agency Ind. Sci. & Technol., Min. Int. Trade & Ind. Sci. Council Japan International Union of Pure and Applied Physics (IUPAP) NIST NRCC National Conference of Standards Laboratories (NCSL) Allen Osborne Associates Andeen-Hagerling, Inc. Ballantine Lab. Inc. Clarke-Hess Communications Research Corp. Fluke Corporation Guildline Instruments Hewlett-Packard Co. Julie Res. Lab. Inc. Keithley Instruments, Inc. Measurements International Ltd. Canada QuadTech Inc. Quantum Design Inc. Rotek Instrum. Corp. Tegam Inc. Tektronix Inc
Starting Page	2067
Ending Page	2072
Page Count	6
File Size	584958
File Format	PDF
ISSN	00189456
Volume Number	56
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MESFETs Artificial neural networks Scattering parameters Microwave devices Temperature FETs Equivalent circuits Circuit testing Data mining Gallium arsenide $S$ -parameters Artificial neural networks (ANNs) equivalent circuit parameters (ECPs) metal semiconductor field effect transistors (MESFETs) modeling radial basis function (RBF) small-signal modeling
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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