NDLI: Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions

Content Provider	IEEE Xplore Digital Library
Author	Raffo, A. Santarelli, A. Traverso, P.A. Vannini, G. Filicori, F.
Copyright Year	1963
Abstract	Empirical electron device models based on lumped equivalent circuits are usually identified through nonlinear optimization procedures, which are based on the best fitting between the extrinsic model behavior and measurements carried out under multibias static and small-signal excitations. In this paper, a new error function is proposed for equivalent circuit model parameter optimization. Although still being defined through standard static and small-signal measurement data, the new error function can be configured so as to obtain models tailored to specific large-signal applications. Experimental results, which confirm the validity of the proposed identification approach, are provided for a GaAs microwave pseudomorphic HEMT model aimed at the design of highly linear power amplifiers.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	1997
Ending Page	2005
Page Count	9
File Size	692333
File Format	PDF
ISSN	00189480
Volume Number	55
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron devices Parameter estimation Equivalent circuits Measurement standards Microwave devices Millimeter wave measurements Scattering parameters Phase measurement Parameter extraction Gallium arsenide semiconductor device modeling Field-effect transistors (FETs) millimeter-wave measurements nonlinear circuits nonlinear distortion
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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