NDLI: Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length

Content Provider	IEEE Xplore Digital Library
Author	Fischetti, M.V. O'Regan, T.P. Sudarshan Narayanan Sachs, C. Seonghoon Jin Jiseok Kim Yan Zhang
Copyright Year	1963
Abstract	We discuss selected aspects of the physics of electronic transport in nMOSFETs at the 10-nm scale: Long-range Coulomb interactions, which may degrade performance and even prevent ballistic transport from occurring; scattering with high-k insulator interfacial modes, which depresses the electron mobility but is found to affect minimally the saturated transconductance of 15-nm devices; and the use of high-mobility small effective-mass substrates, which poses serious concerns related to performance limitations due to the density-of-states (DOS) bottleneck and to the band-to-band (Zener) leakage current. On the basis of our results, we argue that ballistic transport may not only be unachievable (because of unavoidable electron-electron collisions) but may also be undesirable, as it may enhance the DOS bottleneck. We also argue that the knowledge of low-field mobility is of little use in predicting quantitatively the performance of devices in the saturated region.
Sponsorship	IEEE Electron Devices Society
Starting Page	2116
Ending Page	2136
Page Count	21
File Size	557767
File Format	PDF
ISSN	00189383
Volume Number	54
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Insulators Silicon Performance evaluation MOSFETs Materials Scattering transconductance High-$\kappa$ gate dielectric low-field mobility Monte Carlo scaling short channel surface optical phonons
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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