NDLI: Effect of Channel-Width Widening on a Poly-Si Thin-Film Transistor Structure in the Linear Region

Content Provider	IEEE Xplore Digital Library
Author	Kow-Ming Chang Gin-Ming Lin
Copyright Year	1963
Abstract	This is the first paper to discuss the ON-state drain-current of a special thin-film transistor structure with a wide channel width and a narrow source/drain width in the linear region. The experimental results indicate that when the channel width is wider than the source/drain width, the side-channel current effect is generated. This effect increases the ON-state drain-current due to the additional current-flow paths existing in the side-channel regions and low channel resistance. As the side-channel width increases, the ON-state drain-current initially increases and then gradually becomes independent of the side-channel width when the side-channel width is larger than the effective side-channel width, which depends on the channel width and is largely independent of the source/drain width. This paper also demonstrates that the ON-state drain-current gain is directly proportional to the channel length and the ratio of the channel length to the source/drain width and dependent on the side-channel width.
Sponsorship	IEEE Electron Devices Society
Starting Page	2418
Ending Page	2425
Page Count	8
File Size	603707
File Format	PDF
ISSN	00189383
Volume Number	54
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Resistance Logic gates Numerical models Simulation Fabrication Films wide channel width Drain–current poly-Si thin-film transistor (TFT) source/drain width
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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