NDLI: A Gap Reduction and Manufacturing Technique for Thick Oxide Mask Layers With Multiple-Size Sub-<tex>$mu$</tex>m Openings

Content Provider	IEEE Xplore Digital Library
Author	Abdolvand, R. Ayazi, F.
Copyright Year	1992
Abstract	This paper introduces a technique for the fabrication of thick oxide hard masks on top of a substrate with adjustable opening sizes in the sub-mum regime, while the only lithography step involved has mum-scale resolution. This thick oxide mask layer with sub-mum openings is suitable for etching deep narrow trenches in silicon using deep reactive ion etching (DRIE) tools. Openings of less than 100 nm are realized in a 1.5-mum-thick oxide layer, while the original lithographically defined feature sizes are larger than 1 mum in width. This method, combined with modified high aspect ratio DRIE recipes, shows a great potential for single-mask batch-fabrication of high frequency low-impedance single crystalline resonators on silicon-on-insulator (SOI) substrates. Dry-etched trenches with aspect ratios as high as 60:1 are fabricated in silicon using the gap reduction technique to realize 200 nm opening sizes in an oxide mask layer. Various resonator structures with sub-mum capacitive gaps are also fabricated on a SOI substrate using a single-mask process. Measurement results from high-frequency and high-quality factor (Q) all single crystal silicon resonators are presented
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	1139
Ending Page	1144
Page Count	6
File Size	3698216
File Format	PDF
ISSN	10577157
Volume Number	15
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Lithography Dry etching Pulp manufacturing Frequency Crystallization Silicon on insulator technology Q measurement Signal to noise ratio Electromechanical sensors sub- Deep reactive ion etching (DRIE) gap reduction high aspect ration trench
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Singlemask reduced-gap capacitive micromachined devices.

Design and Fabrication of DRIE-Patterned Complex Needlelike Silicon Structures

Stepped-etching for preserving critical dimensions in through-wafer deep reactive ion etching of thick silicon

DRIE OF FUSED SILICA

Najafi K Fabrication of thick silicon dioxide layers using DRIE, oxidation and trench refill (2002)

Fabrication of Glassy Carbon Molds Using Hydrogen Silsequioxane Patterned by Electron Beam Lithography as O2 Dry Etching Mask

Sub-Micro-Gravity In-Plane Accelerometers With Reduced Capacitive Gaps and Extra Seismic Mass

Fast Dry Fabrication Process with Ultra-Thin Atomic Layer Deposited Mask for Released MEMS-Devices with High Electromechanical Coupling

Single-mask fabrication of micro-probe electrode array with various tip heights and sharpness using isotropic and anisotropic etching

A Gap Reduction and Manufacturing Technique for Thick Oxide Mask Layers With Multiple-Size Sub-$mu$m Openings

Similar Documents

Singlemask reduced-gap capacitive micromachined devices.

Design and Fabrication of DRIE-Patterned Complex Needlelike Silicon Structures

Stepped-etching for preserving critical dimensions in through-wafer deep reactive ion etching of thick silicon

DRIE OF FUSED SILICA

Najafi K Fabrication of thick silicon dioxide layers using DRIE, oxidation and trench refill (2002)

Fabrication of Glassy Carbon Molds Using Hydrogen Silsequioxane Patterned by Electron Beam Lithography as O2 Dry Etching Mask

Sub-Micro-Gravity In-Plane Accelerometers With Reduced Capacitive Gaps and Extra Seismic Mass

Fast Dry Fabrication Process with Ultra-Thin Atomic Layer Deposited Mask for Released MEMS-Devices with High Electromechanical Coupling

Single-mask fabrication of micro-probe electrode array with various tip heights and sharpness using isotropic and anisotropic etching

A Gap Reduction and Manufacturing Technique for Thick Oxide Mask Layers With Multiple-Size Sub-$mu$m Openings