NDLI: Factors limiting the performance of CdZnTe detectors

Content Provider	IEEE Xplore Digital Library
Author	Bolotnikov, A.E. Camarda, G.C. Wright, G.W. James, R.B.
Copyright Year	1963
Abstract	In the past few years, significant progress has been achieved in the development of room-temperature semiconductor detectors, particularly those based on CdZnTe (CZT) crystals. Several types of electron-transport-only detectors have been developed: pixel, coplanar-grid, cross-strip, drift-strip, orthogonal coplanar strip, and virtual Frisch grid, many of which are now commercially available. Despite all these varieties in the detector designs, they have many common features and problems. This review summarizes the common detector design constraints and related factors limiting performance of CZT detectors: bulk and surface leakage currents, surface effects, properties of Schottky contacts and surface interfacial layers, charge sharing and loss in multielectrode devices, charge transport nonuniformities, and fluctuations in the pulse height for long-drift-length devices. We also describe unique capabilities at Brookhaven National Laboratory, Upton, NY, for CZT device characterization and recent progress utilizing these tools.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	589
Ending Page	598
Page Count	10
File Size	247125
File Format	PDF
ISSN	00189499
Volume Number	52
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystals Fluctuations Charge carrier processes Radiation detectors Electron mobility Electron traps Leak detection Semiconductor radiation detectors Spectroscopy Energy resolution semiconductor radiation detectors CdZnTe (CZT) gamma-ray detectors
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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Factors affecting energy resolution of coplanar-grid CdZnTe detectors

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