NDLI: Embedded thin film capacitors-theoretical limits

Content Provider	IEEE Xplore Digital Library
Author	Jain, P. Rymaszewski, E.J.
Copyright Year	1999
Abstract	The large physical size of capacitors and/or excessive values of associated lead inductance are two major limitations in the development of novel packaging modules, with high packaging density, high performance and reliability along with low system cost. Embedded capacitor technology in thin film form offers a promising solution to these limitations. A design space with capacitance density and breakdown voltage as performance properties, with material dielectric constant and film thickness as parameters has been explored, focusing on tantalum pentoxide (Ta/sub 2/O/sub 5/) as the dielectric material. An inherent tradeoff is established between breakdown voltage and capacitance density for thin film capacitors. The validity of the proposed design space is illustrated with thin films of Ta/sub 2/O/sub 5/, showing deviation from the "best can achieve" breakdown voltage for films thinner than 0.4 /spl mu/m and films thicker than 1 /spl mu/m.
Sponsorship	IEEE Components, Packaging, and Manufacturing Technology Society IEEE Components, Packaging and Manufacturing Technology Society
Starting Page	454
Ending Page	458
Page Count	5
File Size	625501
File Format	PDF
ISSN	15213323
Volume Number	25
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-08-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Capacitors Dielectric thin films Packaging Space technology Capacitance Dielectric materials Inductance Costs Dielectric constant
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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