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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Fornaro, L. Saucedo, E. Mussio, L. Gancharov, A. Guimaraes, F. Hernandes, A. |
| Copyright Year | 1963 |
| Abstract | Lead iodide platelets grown by physical-vapor deposition were characterized by several properties related to spectrometric performance. Platelets were grown from both synthesized lead iodide without purification, and purified by repeated evaporation. The growth was performed by heating the starting material under vacuum (10/sup -5/ mm Hg) or in high-purity Ar atmosphere (500 mm Hg) at temperatures from 390 to 440/spl deg/C, for 10 to 25 days. Platelets grew at 200-250/spl deg/C and perpendicular to the ampoule wall. Platelet size is up to 13/spl times/8 mm/sup 2/, and their thickness is from 50 to 100 /spl mu/m. The crystals were characterized by optical microscopy, atomic force microscopy, scanning electron microscopy, and low temperature photoluminescence. These characterizations showed that platelets have an exceptional transparence, that they grew from hexagonal grains, and that their surface has a mean roughness in the range from 1.1 to 4.7 nm. Low-temperature photoluminescence peak position and broadness confirmed the high purity of the starting material, and bands confirmed strong components from free and bonded excitons and low superficial imperfections. Electrical properties were measured by making radiation detectors with front palladium thermal deposition contacts and acrylic encapsulation. Resistivity values up to 4/spl times/10/sup 13/ /spl Omega/.cm and current density values as low as 288 pA/cm/sup 2/ (20 V) were obtained. X-ray spectrometry was performed with lead iodide detectors, and an energy resolution of 1.8 keV was achieved for the /sup 241/Am 14 keV radiation. Correlation between optical and surface properties, electrical parameters, and detector performance are presented. Also, the different results were compared with previous ones for lead iodide crystals grown by other methods and with alternative materials. |
| Sponsorship | IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD |
| Starting Page | 3300 |
| Ending Page | 3305 |
| Page Count | 6 |
| File Size | 530513 |
| File Format | |
| ISSN | 00189499 |
| Volume Number | 49 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Spectroscopy Optical microscopy Atomic force microscopy Scanning electron microscopy Optical materials Mercury (metals) Temperature Crystals Atom optics Photoluminescence |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering |
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