NDLI: DCIV and spectral charge-pumping studies of /spl gamma/-ray and X-ray irradiated power VDMOSFET devices

Content Provider	IEEE Xplore Digital Library
Author	Park, M.-S. Na, I.M. Lee, C.I. Wie, C.R.
Copyright Year	1963
Abstract	This paper reports the total dose effects and post-irradiation anneal effects on the two recombination current peaks and the bottom current in commercial power VDMOSFET devices irradiated with /sup 137/Cs /spl gamma/-ray or X-ray radiation. The two interface recombination current peaks show a slightly different rate of increase as a function of the radiation dose. Slightly different diode ideality factors are found in an n-channel device, 1.70 /spl plusmn/ 0.10, 1.60 /spl plusmn/ 0.10 and 1.20 /spl plusmn/ 0.10 for the two DCIV current peaks and the bottom current, respectively. The saturation current of the gated diode, i.e., VDMOSFET, normalized by the input capacitance is shown to be a good parameter to monitor the interface state density. Spectral charge pumping data show that, of the above-midgap interface traps in an n-channel device, the energy below about E/sub i/ + 0.18 eV has a most significant increase in radiation-induced trap density and these traps may be responsible for the DCIV current peaks.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	3230
Ending Page	3237
Page Count	8
File Size	410287
File Format	PDF
ISSN	00189499
Volume Number	49
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Charge pumps Annealing Diodes Radiation effects Photonic band gap Capacitance Condition monitoring Interface states Lead compounds Delay
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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