NDLI: SPICE models for flicker noise in n-MOSFETs from subthreshold to strong inversion

Content Provider	IEEE Xplore Digital Library
Author	Dingming Xie Mengzhang Cheng Forbes, L.
Copyright Year	1982
Abstract	The two main sources of low-frequency flicker noise are mobility fluctuations and number fluctuations. Our experiments on NMOS noise measurements were done from subthreshold to saturation region of operation for both long-channel (5 /spl mu/m) and short-channel (as small as 0.6 /spl mu/m) NMOS transistors. The results suggest that for both types that in the saturation region, the flicker noise is due to the surface state effect and the noise equations, NLEV=2 and 3, in SPICE, HSPICE, and PSPICE are most appropriate. For short-channel devices, due to the effects of velocity saturation and the resulting nonlinear transconductance (g/sub m/) variation with gate bias voltage, the input-referred voltage noise increases as the gate-source voltage increases instead of staying constant as it does for long-channel devices. In the subthreshold region, the input-referred voltage noise decreases drastically as the gate-source voltage increases for both long-channel and short-channel NMOS devices. Simulations have been done using PSPICE and HSPICE, with noise level (NLEV)=3 and device model level 3 and BSIM 3.2 and 3.3. The results from PSPICE version 8.0 level 7 (BSIM 3.3) and SPICE level 3 compare favorably with the measured noise phenomena for the short-channel and long-channel NMOS devices, respectively.
Sponsorship	IEEE Council on Electronic Design Automation IEEE Circuits and Systems Society
Starting Page	1293
Ending Page	1303
Page Count	11
File Size	324334
File Format	PDF
ISSN	02780070
Volume Number	19
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	SPICE 1f noise MOSFET circuits Voltage MOS devices Fluctuations Noise measurement Noise level Nonlinear equations Transconductance
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Electrical and Electronic Engineering Software

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