NDLI: Microwave model of anisotropic conductive film flip-chip interconnections for high frequency applications

Content Provider	IEEE Xplore Digital Library
Author	Myung-Jin Yim Woonghwan Ryu Young-Doo Jeon Junho Lee Seungyoung Ahn Joungho Kim Kyung-Wook Paik
Copyright Year	1999
Abstract	Microwave model and high-frequency measurement of the anisotropically conductive film (ACF) flip-chip interconnection was investigated using a microwave network analysis. The test integrated circuits (ICs) were fabricated using a 1-poly and 3-metal 0.6 /spl mu/m Si process with an inverted embedded microstrip structure. As flip chip bumps, electroless Ni/Au plating was performed on Al input/output (I/O) pads of test IC chips, As an interconnect material, several ACFs were prepared and flip-chip bonded onto the Rogers(R) RO4003 high frequency organic substrate. S-parameters of on-chip and substrate were separately measured in the frequency range of 200 MHz to 20 GHz using a microwave network analyzer HP8510 and cascade probe, and the cascade transmission matrix conversion was performed. The same measurements and conversion were conducted on the test chip mounted substrates at the same frequency range. Then impedance values in flip-chip interconnection were extracted from cascade transmission matrix. The extracted model parameters of the 100 /spl mu/m/spl times/100 /spl mu/m interconnect pad show the resistance increases due to skin effect up to 8 GHz. Above this frequency, conductive loss of epoxy resin also increases. Reactance is dominantly affected by inductance of Ni/Au bumps and also conductive particles in the ACF interconnection over the measured frequency range. The inductance value of ACF flip chip interconnection is below 0.05 nH and the contact resistance is below 0.9 R. In addition, the effects of different ACF conductive particle materials on high frequency electrical behavior in GHz range were also investigated, Different ACF conductive particle materials show difference in the reactance, resistance, and resonance frequency behavior up to 13 GHz. Our results indicate that high frequency electrical performance of ACF combined with electroless Ni/Au bump interconnection is acceptable for use in the high frequency flip chip application up to 13 GHz. Finally, 80-ps rise time digital signal transmission with small dispersion low loss reflection was demonstrated through the flip-chip interconnection with combination of ACF and Ni/Au bump.
Sponsorship	IEEE Components, Packaging, and Manufacturing Technology Society
Starting Page	575
Ending Page	581
Page Count	7
File Size	359603
File Format	PDF
ISSN	15213331
Volume Number	22
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-12-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Anisotropic conductive films Integrated circuit interconnections Semiconductor device measurement Gold Circuit testing Flip chip Substrates Frequency measurement Conductivity measurement Microwave measurements
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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