NDLI: SILC-related effects in flash E/sup 2/PROM's-Part I: A quantitative model for steady-state SILC

Content Provider	IEEE Xplore Digital Library
Author	de Blauwe, J. van Heudt, J. Wellekens, D. Groeseneken, G. Maes, H.E.
Copyright Year	1963
Abstract	In this paper a quantitative model for the steady-state component of the stress induced leakage current (SILC) is developed. The established model is based on the observation of basic degradation monitors on conventional, thermal SiO/sub 2/ gate dielectrics in the thickness range of 6.8-7.1 nm. From a systematic, experimental study, it has been found for the first time that the steady-state SILC, observed after a wide range of constant current stress (CCS) conditions (gate injection polarity), can be uniquely described by a simple, semi-empirical relation, which consists of two parts: 1) the dependence on the measurement field is described as Fowler-Nordheim (FN) tunneling through an oxide barrier of reduced but fixed height (i.e., 0.9 eV), and 2) the level of the SILC at a fixed oxide field is given by the density of neutral bulk oxide traps. Except for a calibration, depending on the oxide thickness and processing, no model parameters have to be adjusted in order to describe all our data. Also, based on bake experiments it has been concluded that interface traps are not causally related to the steady-state SILC in spite of the linear relation which exists between both. Furthermore, these bake experiments provide new evidence that bulk oxide traps play a crucial role in the SILC conduction mechanism.
Sponsorship	IEEE Electron Devices Society
Starting Page	1745
Ending Page	1750
Page Count	6
File Size	162573
File Format	PDF
ISSN	00189383
Volume Number	45
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Steady-state Thermal stresses Leakage current Thermal degradation Dielectrics Carbon capture and storage Density measurement Current measurement Stress measurement Time measurement
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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