NDLI: 18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation

Content Provider	IEEE Xplore Digital Library
Author	Doshi, P. Rohatgi, A.
Copyright Year	1963
Abstract	For the first time, cells formed by rapid thermal processing (RTP) have resulted in 18%-efficient 1 and 4 cm/sup 2/ single-crystal silicon solar cells. Front surface passivation by rapid thermal oxidation (RTO) significantly enhanced the short wavelength response and decreased the effective front surface recombination velocity (including contact effects) from 7.5/spl times/10/sup 5/ to about 2/spl times/10/sup 4//spl times/10/sup 4/ cm/s. This improvement resulted in an increase of about 1% (absolute) in energy conversion efficiency, up to 20 mV in V/sub ot/, and about 1 mA/cm/sup 2/ in J/sub sc/. These RTO-induced enhancements are shown to be consistent with model calculations. Since only 3 to 4 min are required to simultaneously form the phosphorus emitter and aluminum back-surface-field (BSF) and 5 to 6 min are required for growing the RTO, this RTP/RTO process represents the fastest technology for diffusing and oxidizing /spl ges/18%-efficient solar cells. Both cycles incorporate an in situ anneal lasting about 1.5 min to preserve the minority carrier lifetime of lower quality materials such as dendritic-web and multicrystalline silicon. These high-efficiency cells confirmed that RTP results in equivalent performance to cells fabricated by conventional furnace processing (CFP). Detailed characterization and modeling reveals that because of RTO passivation of the front surface (which reduced J/sub 0c/ by nearly a factor of ten), these RTP/RTO cells have become base dominated (J/sub 0b//spl Gt/J/sub 0c/), and further improvement in cell efficiency is possible by a reduction in back surface recombination velocity (BSRV). Based upon model calculations, decreasing the BSRV to 200 cm/s is expected to give 20%-efficient RTP/RTO cells.
Sponsorship	IEEE Electron Devices Society
Starting Page	1710
Ending Page	1716
Page Count	7
File Size	202847
File Format	PDF
ISSN	00189383
Volume Number	45
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Photovoltaic systems Solar power generation Rapid thermal processing Photovoltaic cells Surface waves Passivation Oxidation Energy conversion Aluminum
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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