NDLI: Unconditionally thermally stable cascode GaAs HBTs for microwave applications

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Unconditionally thermally stable cascode GaAs HBTs for microwave applications

Content Provider	IEEE Xplore Digital Library
Author	Bayraktaroglu, B. Salib, M.
Copyright Year	1991
Abstract	The authors describe the performance of a thermally stabilized cascode-heterojunction bipolar transistor (TSC-HBT) that exhibits unconditional thermal stability without the use of ballast resistors. A thermal isolation inserted between the current source (CE stage) and the power stage (CB stage) eliminates the positive electrothermal feedback that causes thermal runaway in bipolar transistors. The TSC-HBT cell designs with f/sub max/ values in excess of 100 GHz demonstrated about 300% improvement in DC power dissipation capability compared to conventional cascode HBTs in a direct comparison.
Starting Page	187
Ending Page	189
Page Count	3
File Size	63980
File Format	PDF
ISSN	10518207
Volume Number	7
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-07-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Heterojunction bipolar transistors Temperature Fingers Thermal resistance Resistors Bipolar transistors Electronic ballasts Feedback Voltage
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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