NDLI: An actively balanced GaAs HBT-Schottky mixer for 3-V wireless applications

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An actively balanced GaAs HBT-Schottky mixer for 3-V wireless applications

Content Provider	IEEE Xplore Digital Library
Author	Kobayashi, K.W. Tran, L.T. Oki, A.K. Lammert, M. Block, T.R. Streit, D.C.
Copyright Year	1991
Abstract	Here we present a novel low-voltage active mixer topology which enables 3-V double-balanced active mixer operation from wide-bandgap GaAs-based heterojunction bipolar transistors (HBTs). The compact mixer design integrates directly coupled active radio frequency (RF) and local oscillator (LO) transformer baluns with a Schottky-diode ring-quad to form a double-balanced mixer which operates from DC to 5 GHz. Biased with a low 3-V supply and operated as a down-converter with a fixed LO at 800 MHz and 0 dBm, the mixer achieves 9.4-dB conversion gain (CG) at 1 GHz with positive CG out to 4 GHz and an IP3 of -5 dBm. The LO-IF isolation is >20 dB while the 2-2 spur suppression is >20 dB over a broad 1-5 GHz RF input band. The novel 2.1/spl middot/V/sub BE/ supply design topology allows 3-V operation from the high turn-on voltage GaAs HBT's, making them suitable for portable wireless applications, and can enable 1.5-V operation for Si, Si-Ge, and InP BJT/HBT technologies.
Starting Page	181
Ending Page	183
Page Count	3
File Size	63379
File Format	PDF
ISSN	10518207
Volume Number	7
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-07-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Radio frequency Topology Heterojunction bipolar transistors Mixers Character generation Local oscillators Impedance matching Voltage Indium phosphide
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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