NDLI: Deep submicron CMOS based on silicon germanium technology

Content Provider	IEEE Xplore Digital Library
Author	O'Neill, A.G. Antoniadis, D.A.
Copyright Year	1963
Abstract	The advantages to be gained by using SiGe in CMOS technology are examined, Conventional MOSFETs are compared with SiGe heterojunction MOSFETs suitable for CMOS technology and having channel lengths between 0.5 and 0.1 /spl mu/m. Two-dimensional computer simulation demonstrates that the improved mobility in the SiGe devices, due to higher bulk mobility and the elimination of Si/SiO/sub 2/ interface scattering by the inclusion of a capping layer, results in significant velocity overshoot close to the source-end of the channel. The cut-off frequency, f/sub t/, is found to increase by around 50% for n-channel devices while more than doubling for p-channel devices for typical estimates of mobility. The results offer the prospect of a more balanced CMOS and improved circuit speed especially when using dynamic logic.
Sponsorship	IEEE Electron Devices Society
Starting Page	911
Ending Page	918
Page Count	8
File Size	964617
File Format	PDF
ISSN	00189383
Volume Number	43
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys CMOS technology CMOS logic circuits MOSFETs Frequency estimation Heterojunctions Computer simulation Scattering Cutoff frequency
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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