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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lee, H.C. Van Zeghbroeck, B. |
| Copyright Year | 1980 |
| Abstract | A novel high-speed silicon photodetector that operates at a wavelength of 830 nm is reported. It consists of a Metal-Semiconductor-Metal (MSM) detector that is fabricated on a 5-/spl mu/m thick silicon membrane. The detector has a measured -3 dB bandwidth of 3 GHz at 10 V, which is almost one order of magnitude larger than the reported bandwidth of conventional silicon MSM detectors as measured at 830 nm. The DC responsivity is 0.17 A/W, corresponding to an internal quantum efficiency of 60.5% and an external quantum efficiency of 25.4%. The large bandwidth and good responsivity at the wavelength of interest, combined with its low operating voltage and compatibility with most silicon integrated circuit technologies, make this detector a promising candidate for monolithic optoelectronic receiver circuits for use in short distance optical communication systems and computer interconnects.< |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 175 |
| Ending Page | 177 |
| Page Count | 3 |
| File Size | 293877 |
| File Format | |
| ISSN | 07413106 |
| Volume Number | 16 |
| Issue Number | 5 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-05-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Photodetectors Detectors Bandwidth Wavelength measurement Biomembranes Integrated circuit measurements Low voltage Integrated circuit technology Optical receivers |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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