NDLI: MSM photodetector fabricated on polycrystalline silicon

Content Provider	IEEE Xplore Digital Library
Author	MacDonald, R.P. Tarr, N.G. Syrett, B.A. Boothroyd, S.A. Chrostowski, J.
Copyright Year	1989
Abstract	Interdigitated metal-semiconductor-metal (MSM) photodetectors were fabricated by depositing metal contacts on top of a 2-/spl mu/m-thick layer of polycrystalline silicon (polysilicon). These detectors have a -3-dB bandwidth of 750 MHz and a responsivity of 0.13 A/W at 860 nm. The bandwidth is more than twice that reported for conventional silicon MSM photodetectors as a result of the thin absorbing layer made possible by the higher optical absorption of polysilicon. A simple fabrication process that is compatible with standard VLSI processes, together with good performance characteristics, make this an ideal detector for integrated optoelectronic receivers for use in short distance, parallel optical data links.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	108
Ending Page	110
Page Count	3
File Size	86662
File Format	PDF
ISSN	10411135
Volume Number	11
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photodetectors Silicon Optical receivers Bandwidth Detectors Absorption Optical device fabrication Very large scale integration Integrated optoelectronics Integrated optics
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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